CSOP FTSE HK-Korea Tech+ ETF (03431.HK) Up 0.53% as KOSPI Turns Higher

NewTimeSpace News: As of 10:51 on November 9, CSOP FTSE HK-Korea Tech+ ETF (03431.HK) rose 0.53% to a latest price of HK$8.535. The ETF has so far traded 585,300 units today, with turnover of HK$4.9945 million and an average price of HK$8.533; its turnover rate is 0.513%. It has gained 0.53% week to date. The net asset value per unit is HK$8.4975, and assets under management stand at HK$969 million. (Note: NAV and AUM are as of November 6; the week-to-date change is based on the previous close of HK$8.490 on November 6, so it matches the one-day gain.)

South Korean stocks opened lower and turned higher on November 9. The KOSPI initially fell 0.63% to 5,028.01 before reversing course to 5,143.96 by 11:49 Seoul time (10:49 Beijing time), up 84.27 points or 1.67%. SK Hynix rose 3.36% and Samsung Electronics 2.44%. On the industry front, Samsung and SK Hynix are racing to place additional orders for extreme ultraviolet (EUV) lithography equipment, with commitments of KRW10 trillion to about KRW20 trillion, and ASML has confirmed that EUV supply will fall short of demand in 2027-2028; SK Hynix plans to apply EUV to more than five layers in 1c DRAM, two more than the previous generation. Hong Kong tech rose in tandem, with the Hang Seng TECH Index at 4,101.85, up 0.58%, by 10:33.

CSOP FTSE HK-Korea Tech+ ETF (03431.HK) tracks the FTSE HK-Korea Tech+ Index, whose constituents are large and mid-cap technology companies listed in Hong Kong and South Korea, spanning semiconductors, consumer electronics, internet platforms, and software and services, weighted by market capitalisation to reflect the performance of technology leaders across both markets. The product is managed by CSOP Asset Management Limited.

TrendForce notes that amid AI demand and tight supply, contract prices for conventional DRAM and NAND Flash will rise another 10% to 20% in the fourth quarter of 2026, with DRAM contract prices up about 20% quarter on quarter. Large procurement contracts from server makers have locked up foundries' advanced capacity, and since high-bandwidth memory (HBM) shares the same wafer capacity as conventional DRAM, a higher HBM mix will further squeeze conventional DRAM supply.