TSMC capacity crunch creates opening for Samsung Electronics; Samsung Bloomberg Global Semiconductor Etf (03132.HK) surges over 3% at open

NewTimeSpace Report: Explosive AI demand has created a rare production bottleneck for TSMC's advanced 3nm process node, with current capacity fully booked through 2027. Deutsche Bank notes that TSMC's capacity crunch presents Samsung Electronics with a significant order diversion opportunity.

As of 9:57 AM, Samsung Bloomberg Global Semiconductor Etf (03132.HK) surged over 3% in early trading, bringing its six-month gain to more than 44%.

According to HKEX data, Samsung Global Semiconductor (03132.HK) tracks the Bloomberg Global Semiconductor Top 20 Index, focusing exclusively on the global semiconductor space. As part of Bloomberg's Thematic Index Series, the semiconductor sub-index filters the 20 global leading securities with the highest proportion of semiconductor revenue relative to total income from its parent index.

The index employs dual criteria of "revenue purity + market cap leadership" to concentrate on the 20 most representative semiconductor core assets worldwide, offering investors a high-purity, low-redundancy beta tool for semiconductor thematic exposure.

South Korean media ZDNET Korea reported today that Samsung Electronics will continue its "process technology advantage" strategy for custom HBM memory beyond HBM4, offering a range of base die solutions spanning from 4nm to the current most advanced 2nm process nodes.

High-end AI XPU chips paired with HBM memory are hitting the theoretical maximum die size limit (858mm² reticle limit), which constrains further compute performance improvements. Beyond multi-chip physical/interconnection solutions, one approach to circumvent this limitation involves offloading certain circuits to adjacent HBM base dies.

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