NewTimeSpace News:As of 14:40 on February 9, 2026, the CSI Electronics Index (930652) surged 2.64%. Among its constituent stocks, VeriSilicon Holdings Co., Ltd. rose 14.69%, Fudan Microelectronics Group Co., Ltd. climbed 9.90%, and Xchuang Data Technology Co., Ltd. advanced 7.41%, with UNIC Semiconductor Corporation, CCTC Group Co., Ltd. and other stocks following the upward trend. TheTianhong CSI Electronic ETF (159997) rose 2.60% to close at RMB 1.70. In the longer term, as of February 6, 2026, the ETF had a cumulative gain of 37.00% in the past six months. (The stocks listed above are merely constituent stocks of the index and do not constitute specific investment recommendations.)

In terms of liquidity, theTianhong CSI Electronic ETF posted an intraday turnover rate of 2.56% with a trading volume of RMB 33.9904 million. As of February 9, the ETF's average daily trading volume in the past month reached RMB 45.7986 million.

In terms of scale, the latest size of theTianhong CSI Electronic ETF stood at RMB 1.303 billion. (Data source: Wind)

Regarding capital flows, theTianhong CSI Electronic ETF recorded a latest net capital outflow of RMB 6.5889 million. Over the recent five trading days, it has attracted a total of RMB 10.5077 million in capital inflows. (Data source: Wind)

Data shows that leveraged capital has been continuously building positions in the ETF. TheTianhong CSI Electronic ETF had a net margin purchase of RMB 1.0957 million in the previous trading day, with the latest margin trading balance standing at RMB 16.8771 million. (Data source: Wind)

As of February 6, theTianhong CSI Electronic ETF's net asset value had surged 121.62% over the past two years, ranking 229th out of 2,556 index equity funds and placing it in the top 8.96%. In terms of profitability, as of February 6, 2026, since its establishment, the ETF has achieved a maximum monthly return of 26.39%, a record of four consecutive months of gains with a cumulative increase of 65.50%, a ratio of rising to falling months of 39:32, an average monthly return of 6.65% in upward months, and an annual profit rate of 80.00%. As of February 6, 2026, the ETF had an annualized excess return of 4.96% over the benchmark since its inception.

As of February 6, 2026, theTianhong CSI Electronic ETF had a Sharpe ratio of 1.56 over the past two years.

In terms of drawdown, as of February 6, 2026, the ETF had a maximum drawdown of 8.43% since the start of the year, with a relative benchmark drawdown of 0.03%.

Regarding fees, theTianhong CSI Electronic ETF has a management fee rate of 0.50% and a custodian fee rate of 0.10%.

In terms of tracking accuracy, as of February 6, 2026, the ETF had a tracking error of 0.008% in the past month.

TheTianhong CSI Electronic ETF closely tracks the CSI Electronics Index, which selects listed company securities engaged in businesses such as semiconductor manufacturing, computer and peripheral device production, and electronic and consumer electronic device manufacturing as samples, so as to reflect the overall performance of electronics-related listed companies.

Data shows that as of January 30, 2026, the top 10 weighted stocks of the CSI Electronics Index (930652) were Cambricon Technologies Corporation Limited, Luxshare Precision Industry Co., Ltd., Semiconductor Manufacturing International Corporation (SMIC), Haiguang Information Technology Co., Ltd., Foxconn Industrial Internet Co., Ltd., GigaDevice Semiconductor Inc., Montage Technology Co., Ltd., NAURA Technology Group Co., Ltd., Shenghong Technology Co., Ltd. and BOE Technology Group Co., Ltd., accounting for a total of 37.02% of the index's weight. (The stocks listed above are merely constituent stocks of the index and do not constitute specific investment recommendations.)

CGS stated that the storage market maintained the strong upward momentum that started in the fourth quarter of 2025 in January, with the price increases of DRAM and NAND flash memory continuing to exceed expectations. Leading manufacturers such as Samsung Electronics and SK Hynix have sharply raised their contract prices for the first quarter, among which the supply price of NAND flash memory has risen by more than 100% and the price of DRAM has increased by 60%-70%. The core driving factors for the price hikes include the explosive demand for HBM from AI servers, increased capital expenditure in data centers, and structural capacity adjustments. The supply-demand gap is continuing to widen, and this round of price hike cycle is expected to last until the middle of 2026.

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